BUL1203E دیتاشیت

BUL1203E

مشخصات دیتاشیت

نام دیتاشیت BUL1203E
حجم فایل 67.47 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت BUL1203E

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سایر مستندات

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: STMicroelectronics BUL1203E
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 5A
  • Power Dissipation (Pd): 100W
  • Transition Frequency (fT): -
  • DC Current Gain (hFE@Ic,Vce): 9@2A,5V
  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 550V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.5V@3A,1A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 550V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 2A, 5V
  • Power - Max: 100W
  • Frequency - Transition: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Base Part Number: BUL1203
  • detail: Bipolar (BJT) Transistor NPN 550V 5A 100W Through Hole TO-220AB

محصولات مشابه