STP36N55M5 دیتاشیت

STP36N55M5

مشخصات دیتاشیت

نام دیتاشیت STP36N55M5
حجم فایل 65.854 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

مشاهده دیتاشیت STP36N55M5

دانلود دیتاشیت

سایر مستندات

STx36N55M5 15 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP36N55M5
  • Power Dissipation (Pd): 190W
  • Total Gate Charge (Qg@Vgs): 62nC@10V
  • Drain Source Voltage (Vdss): 550V
  • Input Capacitance (Ciss@Vds): 2670pF@100V
  • Continuous Drain Current (Id): 33A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@16.5A,10V
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ V
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP36N
  • detail: N-Channel 550V 33A (Tc) 190W (Tc) Through Hole TO-220

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