STGWA75M65DF2 دیتاشیت

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مشاهده دیتاشیت STGWA75M65DF2	دانلود دیتاشیت

RoHS: true
Type: Trench Field Stop
Category: Triode/MOS Tube/Transistor/IGBTs
Datasheet: STMicroelectronics STGWA75M65DF2
Operating Temperature: -55°C~+175°C@(Tj)
Collector Current (Ic): 120A
Power Dissipation (Pd): 468W
Turn?on Delay Time (Td(on)): 47ns
Input Capacitance (Cies@Vce): -
Turn?on Switching Loss (Eon): 0.69mJ
Total Gate Charge (Qg@Ic,Vge): 225nC
Turn?off Delay Time (Td(off)): 125ns
Pulsed Collector Current (Icm): 225A
Turn?off Switching Loss (Eoff): 2.54mJ
Diode Reverse Recovery Time (Trr): 165ns
Collector-Emitter Breakdown Voltage (Vces): 650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,75A
Package: TO-247
Manufacturer: STMicroelectronics
Series: M
Packaging: Tube
Part Status: Active
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 468W
Switching Energy: 690µJ (on), 2.54mJ (off)
Input Type: Standard
Gate Charge: 225nC
Td (on/off) @ 25°C: 47ns/125ns
Test Condition: 400V, 75A, 3.3Ohm, 15V
Reverse Recovery Time (trr): 165ns
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Base Part Number: STGWA75
detail: IGBT Trench Field Stop 650V 120A 468W Through Hole TO-247 Long Leads