STP13N95K3 دیتاشیت

STP13N95K3

مشخصات دیتاشیت

نام دیتاشیت STP13N95K3
حجم فایل 71.18 کیلوبایت
نوع فایل pdf
تعداد صفحات 19

مشاهده دیتاشیت STP13N95K3

دانلود دیتاشیت

سایر مستندات

STx(I)13N95K3 19 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP13N95K3
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 190W
  • Total Gate Charge (Qg@Vgs): 51nC@10V
  • Drain Source Voltage (Vdss): 950V
  • Input Capacitance (Ciss@Vds): 1620pF@100V
  • Continuous Drain Current (Id): 10A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
  • Reverse Transfer Capacitance (Crss@Vds): 1.2pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 680mΩ@10V,5A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP13N
  • detail: N-Channel 950V 10A (Tc) 190W (Tc) Through Hole TO-220

محصولات مشابه