STGW80V60DF دیتاشیت

STGW80V60DF

مشخصات دیتاشیت

نام دیتاشیت STGW80V60DF
حجم فایل 64.145 کیلوبایت
نوع فایل pdf
تعداد صفحات 18

مشاهده دیتاشیت STGW80V60DF

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مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: STMicroelectronics STGW80V60DF
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 120A
  • Power Dissipation (Pd): 469W
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 1.8mJ
  • Pulsed Collector Current (Icm): 240A
  • Turn?off Switching Loss (Eoff): 1mJ
  • Diode Reverse Recovery Time (Trr): 60ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
  • Package: TO-247
  • Manufacturer: STMicroelectronics
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
  • Power - Max: 469W
  • Switching Energy: 1.8mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 448nC
  • Td (on/off) @ 25°C: 60ns/220ns
  • Test Condition: 400V, 80A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Exposed Pad
  • Supplier Device Package: TO-247
  • Base Part Number: STGW80
  • detail: IGBT Trench Field Stop 600V 120A 469W Through Hole TO-247

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