STD5NM60-1 دیتاشیت

STD5NM60-1

مشخصات دیتاشیت

نام دیتاشیت STD5NM60-1
حجم فایل 73.263 کیلوبایت
نوع فایل pdf
تعداد صفحات 18

مشاهده دیتاشیت STD5NM60-1

دانلود دیتاشیت

سایر مستندات

STD5NM60, STB8NM60, STP8NM60 18 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STD5NM60-1
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 96W
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 400pF@25V
  • Continuous Drain Current (Id): 5A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1Ω@10V,2.5A
  • Package: TO-251
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: STD5N
  • detail: N-Channel 600V 5A (Tc) 96W (Tc) Through Hole I-PAK

محصولات مشابه