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- دیتاشیت STF20N65M5
STF20N65M5 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STF20N65M5 |
|---|---|
| حجم فایل | 69.932 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 18 |
دانلود دیتاشیت STF20N65M5 |
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سایر مستندات
STF(I, W)20N65M5 18 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STF20N65M5
- Power Dissipation (Pd): 30W
- Total Gate Charge (Qg@Vgs): 45nC@10V
- Drain Source Voltage (Vdss): 650V
- Input Capacitance (Ciss@Vds): 1345pF@100V
- Continuous Drain Current (Id): 18A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@9A,10V
- Package: TO-220
- Manufacturer: STMicroelectronics
- Series: MDmesh™ V
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
- Base Part Number: STF20
- detail: N-Channel 650V 18A (Tc) 30W (Tc) Through Hole TO-220FP