STW19NM50N دیتاشیت

STW19NM50N

مشخصات دیتاشیت

نام دیتاشیت STW19NM50N
حجم فایل 64.621 کیلوبایت
نوع فایل pdf
تعداد صفحات 18

مشاهده دیتاشیت STW19NM50N

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سایر مستندات

STx19NM50N 18 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STW19NM50N
  • Power Dissipation (Pd): 110W
  • Total Gate Charge (Qg@Vgs): 34nC@10V
  • Drain Source Voltage (Vdss): 500V
  • Input Capacitance (Ciss@Vds): 1000pF@50V
  • Continuous Drain Current (Id): 14A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@10V,7A
  • Package: TO-247-3
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
  • Base Part Number: STW19N
  • detail: N-Channel 500V 14A (Tc) 110W (Tc) Through Hole TO-247-3

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