STx21N65M5 دیتاشیت

STx21N65M5

مشخصات دیتاشیت

نام دیتاشیت STx21N65M5
حجم فایل 1467.495 کیلوبایت
نوع فایل pdf
تعداد صفحات 22

مشاهده دیتاشیت STx21N65M5

دانلود دیتاشیت

سایر مستندات

STF21N65M5 22 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP21N65M5
  • Operating Temperature: +150°C@(Tj)
  • Power Dissipation (Pd): 125W
  • Total Gate Charge (Qg@Vgs): 50nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 1.95nF@100V
  • Continuous Drain Current (Id): 17A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 3pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@10V,8.5A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ V
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP21N
  • detail: N-Channel 650V 17A (Tc) 125W (Tc) Through Hole TO-220AB

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