STL22N65M5 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STL22N65M5
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حجم فایل
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51.938
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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17
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STL22N65M5
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Power Dissipation (Pd):
2.8W;110W
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Total Gate Charge (Qg@Vgs):
36nC@10V
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Drain Source Voltage (Vdss):
650V
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Input Capacitance (Ciss@Vds):
1345pF@100V
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Continuous Drain Current (Id):
15A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
210mΩ@8.5A,10V
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Package:
PowerFLAT-5
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Manufacturer:
STMicroelectronics
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Series:
MDmesh™ V
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
650V
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Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
210mOhm @ 8.5A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
1345pF @ 100V
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FET Feature:
-
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Power Dissipation (Max):
2.8W (Ta), 110W (Tc)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
PowerFlat™ (8x8) HV
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Package / Case:
8-PowerVDFN
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Base Part Number:
STL22
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detail:
N-Channel 650V 15A (Tc) 2.8W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV
