STP4NK50ZD دیتاشیت

STP4NK50ZD

مشخصات دیتاشیت

نام دیتاشیت STP4NK50ZD
حجم فایل 67.376 کیلوبایت
نوع فایل pdf
تعداد صفحات 17

دانلود دیتاشیت STP4NK50ZD

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سایر مستندات

ST(D,P)4NK50Z(FP,-1) 23 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP4NK50ZD
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 45W
  • Total Gate Charge (Qg@Vgs): 12nC@10V
  • Drain Source Voltage (Vdss): 500V
  • Input Capacitance (Ciss@Vds): 310pF@25V
  • Continuous Drain Current (Id): 3A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@50uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.7Ω@10V,1.5A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH™
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP4N
  • detail: N-Channel 500V 3A (Tc) 45W (Tc) Through Hole TO-220AB

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