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- دیتاشیت STW24NM60N
STW24NM60N دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STW24NM60N |
|---|---|
| حجم فایل | 69.901 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 20 |
دانلود دیتاشیت STW24NM60N |
دانلود دیتاشیت |
|---|
سایر مستندات
STF24NM60N, STP24NM60N 20 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STW24NM60N
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 125W
- Total Gate Charge (Qg@Vgs): 46nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 1400pF@50V
- Continuous Drain Current (Id): 17A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 3.2pF@50V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 168mΩ@10V,8A
- Package: TO-247
- Manufacturer: STMicroelectronics
- Series: MDmesh™ II
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
- Base Part Number: STW24N
- detail: N-Channel 600V 17A (Tc) 125W (Tc) Through Hole TO-247
