CSD25485F5 دیتاشیت

CSD25485F5

مشخصات دیتاشیت

نام دیتاشیت CSD25485F5
حجم فایل 73.784 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

مشاهده دیتاشیت CSD25485F5

دانلود دیتاشیت

سایر مستندات

FemtoFET Surface Mount Guide 11 pages

CSD25485F5 Datasheet 14 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD25485F5
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 500mW
  • Total Gate Charge (Qg@Vgs): 3.5nC@4.5V
  • Input Capacitance (Ciss@Vds): 533pF@10V
  • Continuous Drain Current (Id): 3.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@900mA,8V
  • Package: PicoStar-3
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 500mW (Ta)
  • Drain to Source Voltage (Vdss): 20V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
  • Vgs (Max): -12V
  • FET Type: P-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 533pF @ 10V
  • Packaging: Cut Tape (CT)
  • Package / Case: 3-SMD, No Lead
  • Part Status: Active
  • Series: FemtoFET™
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
  • Supplier Device Package: 3-PICOSTAR
  • Mounting Type: Surface Mount
  • Base Part Number: CSD25485
  • detail: P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

محصولات مشابه