CSD17318Q2T دیتاشیت

CSD17318Q2T

مشخصات دیتاشیت

نام دیتاشیت CSD17318Q2T
حجم فایل 87.223 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

مشاهده دیتاشیت CSD17318Q2T

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سایر مستندات

CSD17318Q2 Datasheet 15 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD17318Q2T
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 16W
  • Total Gate Charge (Qg@Vgs): 6nC@4.5V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 879pF@15V
  • Continuous Drain Current (Id): 25A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 15.1mΩ@8A,8V
  • Package: WSON-6
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 16W (Tc)
  • Drain to Source Voltage (Vdss): 30V
  • Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
  • Vgs (Max): ±10V
  • FET Type: N-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 15V
  • Packaging: Cut Tape (CT)
  • Package / Case: 6-WDFN Exposed Pad
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Supplier Device Package: 6-WSON (2x2)
  • Mounting Type: Surface Mount
  • Base Part Number: CSD173
  • detail: N-Channel 30V 25A (Tc) 16W (Tc) Surface Mount 6-WSON (2x2)

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