CSD75208W1015 دیتاشیت

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مشاهده دیتاشیت CSD75208W1015	دانلود دیتاشیت

RoHS: true
Type: 2 P-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD75208W1015
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 750mW
Total Gate Charge (Qg@Vgs): 2.5nC@4.5V
Drain Source Voltage (Vdss): 20V
Input Capacitance (Ciss@Vds): 410pF@10V
Continuous Drain Current (Id): 1.6A
Gate Threshold Voltage (Vgs(th)@Id): 1.1V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 68mΩ@4.5V,1A
Package: BGA-6
Manufacturer: Texas Instruments
Drain to Source Voltage (Vdss): 20V
Power - Max: 750mW
Rds On (Max) @ Id, Vgs: 68mOhm @ 1A, 4.5V
FET Type: 2 P-Channel (Dual) Common Source
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 1.6A
FET Feature: Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Series: NexFET™
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Supplier Device Package: 6-DSBGA
Mounting Type: Surface Mount
Base Part Number: CSD7520
detail: Mosfet Array 2 P-Channel (Dual) Common Source 20V 1.6A 750mW Surface Mount 6-DSBGA