CSD22206WT دیتاشیت

CSD22206WT

مشخصات دیتاشیت

نام دیتاشیت CSD22206WT
حجم فایل 84.037 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

دانلود دیتاشیت CSD22206WT

دانلود دیتاشیت

سایر مستندات

CSD22206W Datasheet 14 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD22206WT
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.7W
  • Total Gate Charge (Qg@Vgs): 14.6nC@4.5V
  • Drain Source Voltage (Vdss): 8V
  • Input Capacitance (Ciss@Vds): 2275pF@4V
  • Continuous Drain Current (Id): 5A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.05V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.7mΩ@2A,4.5V
  • Package: BGA-9
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 1.7W (Ta)
  • Drain to Source Voltage (Vdss): 8V
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V
  • Vgs (Max): -6V
  • FET Type: P-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2275pF @ 4V
  • Packaging: Cut Tape (CT)
  • Package / Case: 9-UFBGA, DSBGA
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 1.05V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 4.5V
  • Supplier Device Package: 9-DSBGA (1.5x1.5)
  • Mounting Type: Surface Mount
  • Base Part Number: CSD222
  • detail: P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA (1.5x1.5)

محصولات مشابه