STU3LN62K3 دیتاشیت

STU3LN62K3

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نام دیتاشیت STU3LN62K3
حجم فایل 70.805 کیلوبایت
نوع فایل pdf
تعداد صفحات 21

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مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STU3LN62K3
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: TO-251
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: STU3L
  • detail: N-Channel 620V 2.5A (Tc) 45W (Tc) Through Hole I-PAK

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