CSD17576Q5B دیتاشیت

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مشاهده دیتاشیت CSD17576Q5B Datasheet	دانلود دیتاشیت

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Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Vgs (Max): ±20V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Manufacturer: Texas Instruments
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Feature: -
Input Capacitance (Ciss) (Max) @ Vds: 4430pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Part Status: Active
Series: NexFET™
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Supplier Device Package: 8-VSONP (5x6)
Mounting Type: Surface Mount
Base Part Number: CSD17576
detail: N-Channel 30V 100A (Ta) 3.1W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)