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- دیتاشیت STGD5H60DF
STGD5H60DF دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STGD5H60DF |
|---|---|
| حجم فایل | 48.849 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 31 |
دانلود دیتاشیت STGD5H60DF |
دانلود دیتاشیت |
|---|
سایر مستندات
STG(B,D,F,P)5H60DF Datasheet 31 pages
مشخصات فنی
- RoHS: true
- Type: Trench Field Stop
- Category: Triode/MOS Tube/Transistor/IGBTs
- Datasheet: STMicroelectronics STGD5H60DF
- Operating Temperature: -55°C~+175°C@(Tj)
- Collector Current (Ic): 10A
- Power Dissipation (Pd): 83W
- Turn?on Delay Time (Td(on)): 30ns
- Input Capacitance (Cies@Vce): -
- Turn?on Switching Loss (Eon): 0.056mJ
- Total Gate Charge (Qg@Ic,Vge): 43nC
- Turn?off Delay Time (Td(off)): 140ns
- Pulsed Collector Current (Icm): 20A
- Turn?off Switching Loss (Eoff): 0.0785mJ
- Diode Reverse Recovery Time (Trr): 134.5ns
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.95V@15V,5A
- Package: TO-252
- Manufacturer: STMicroelectronics
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 10A
- Current - Collector Pulsed (Icm): 20A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
- Power - Max: 83W
- Switching Energy: 56µJ (on), 78.5µJ (off)
- Input Type: Standard
- Gate Charge: 43nC
- Td (on/off) @ 25°C: 30ns/140ns
- Test Condition: 400V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr): 134.5ns
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Base Part Number: STGD5
- detail: IGBT Trench Field Stop 600V 10A 83W Surface Mount DPAK