STD5N60DM2 Datasheet دیتاشیت

STD5N60DM2 Datasheet

مشخصات دیتاشیت

نام دیتاشیت STD5N60DM2 Datasheet
حجم فایل 395.471 کیلوبایت
نوع فایل pdf
تعداد صفحات 18

مشاهده دیتاشیت STD5N60DM2 Datasheet

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سایر مستندات

STD5N60DM2 18 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STD5N60DM2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 45W
  • Total Gate Charge (Qg@Vgs): 8.6nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 375pF@100V
  • Continuous Drain Current (Id): 3.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 3.5pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.38Ω@10V,1.75A
  • Package: TO-252
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DM2
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: STD5N
  • detail: N-Channel 600V 3.5A (Tc) 45W (Tc) Surface Mount DPAK

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