MJB44H11T4-A دیتاشیت

MJB44H11T4-A

مشخصات دیتاشیت

نام دیتاشیت MJB44H11T4-A
حجم فایل 48.242 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت MJB44H11T4-A

دانلود دیتاشیت

سایر مستندات

MJB44H11T4 11 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: STMicroelectronics MJB44H11T4-A
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 10A
  • Power Dissipation (Pd): 50W
  • Transition Frequency (fT): -
  • DC Current Gain (hFE@Ic,Vce): 40@4A,1V
  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@8A,400mA
  • Package: D2PAK-3
  • Manufacturer: STMicroelectronics
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
  • Power - Max: 50W
  • Frequency - Transition: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Base Part Number: MJB44
  • detail: Bipolar (BJT) Transistor NPN 80V 10A 50W Surface Mount D2PAK

محصولات مشابه