STS8C5H30L دیتاشیت

STS8C5H30L

مشخصات دیتاشیت

نام دیتاشیت STS8C5H30L
حجم فایل 58.719 کیلوبایت
نوع فایل pdf
تعداد صفحات 18

مشاهده دیتاشیت STS8C5H30L

دانلود دیتاشیت

سایر مستندات

STS8C5H30L 18 pages

مشخصات فنی

  • RoHS: true
  • Type: 1PCSN-Channel&1PCSP-Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STS8C5H30L
  • Operating Temperature: +150°C@(Tj)
  • Power Dissipation (Pd): 1.6W
  • Total Gate Charge (Qg@Vgs): 10nC@5V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 857pF@25V
  • Continuous Drain Current (Id): 8A;5.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,4A;45mΩ@10V,2.5A
  • Package: SOIC-8
  • Manufacturer: STMicroelectronics
  • Series: STripFET™ III
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
  • Power - Max: 2W
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
  • Base Part Number: STS8C5
  • detail: Mosfet Array N and P-Channel 30V 8A, 5.4A 2W Surface Mount 8-SO

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