STD5NM60, STB8NM60, STP8NM60 دیتاشیت

STD5NM60, STB8NM60, STP8NM60

مشخصات دیتاشیت

نام دیتاشیت STD5NM60, STB8NM60, STP8NM60
حجم فایل 567.812 کیلوبایت
نوع فایل pdf
تعداد صفحات 18

مشاهده دیتاشیت STD5NM60, STB8NM60, STP8NM60

دانلود دیتاشیت

سایر مستندات

STD5NM60-1 18 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STD5NM60T4
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 96W
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 400pF@25V
  • Continuous Drain Current (Id): 5A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 10pF@25V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 900mΩ@10V,2.5A
  • Package: TO-252
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: STD5N
  • detail: N-Channel 600V 5A (Tc) 96W (Tc) Surface Mount DPAK

محصولات مشابه