STGB15M65DF2 Datasheet دیتاشیت

STGB15M65DF2 Datasheet

مشخصات دیتاشیت

نام دیتاشیت STGB15M65DF2 Datasheet
حجم فایل 1133.131 کیلوبایت
نوع فایل pdf
تعداد صفحات 19

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سایر مستندات

STGB15M65DF2 19 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: STMicroelectronics STGB15M65DF2
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 30A
  • Power Dissipation (Pd): 136W
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.09mJ
  • Pulsed Collector Current (Icm): 60A
  • Turn?off Switching Loss (Eoff): 0.45mJ
  • Diode Reverse Recovery Time (Trr): 142ns
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
  • Package: D2PAK
  • Manufacturer: STMicroelectronics
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 136W
  • Switching Energy: 90µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 24ns/93ns
  • Test Condition: 400V, 15A, 12Ohm, 15V
  • Reverse Recovery Time (trr): 142ns
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Base Part Number: STGB15
  • detail: IGBT Trench Field Stop 650V 30A 136W Surface Mount D2PAK

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