STL16N60M2 دیتاشیت

STL16N60M2

مشخصات دیتاشیت

نام دیتاشیت STL16N60M2
حجم فایل 60.865 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

مشاهده دیتاشیت STL16N60M2

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سایر مستندات

STL16N60M2 15 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STL16N60M2
  • Power Dissipation (Pd): 52W
  • Total Gate Charge (Qg@Vgs): 19nC@10V
  • Input Capacitance (Ciss@Vds): 704pF@100V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 355mΩ@4A,10V
  • Package: PowerFlat-8
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ M2
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 355mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6) HV
  • Package / Case: 8-PowerVDFN
  • Base Part Number: STL16
  • detail: N-Channel 600V 8A (Tc) 52W (Tc) Surface Mount PowerFlat™ (5x6) HV

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