STL33N60DM2 دیتاشیت

STL33N60DM2

مشخصات دیتاشیت

نام دیتاشیت STL33N60DM2
حجم فایل 62.337 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

مشاهده دیتاشیت STL33N60DM2

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سایر مستندات

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STL33N60DM2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 150W
  • Total Gate Charge (Qg@Vgs): 43nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 1870pF@100V
  • Continuous Drain Current (Id): 21A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 140mΩ@10V,10.5A
  • Package: SMD
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DM2
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
  • Base Part Number: STL33
  • detail: N-Channel 600V 21A (Tc) 150W (Tc) Surface Mount PowerFlat™ (8x8) HV

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