CSD16401Q5 دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD16401Q5
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.1W
Total Gate Charge (Qg@Vgs): 29nC@4.5V
Drain Source Voltage (Vdss): 25V
Input Capacitance (Ciss@Vds): 4100pF@12.5V
Continuous Drain Current (Id): 38A;100A
Gate Threshold Voltage (Vgs(th)@Id): 1.9V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6mΩ@40A,10V
Package: VSON-8-CLIP
Manufacturer: Texas Instruments
Power Dissipation (Max): 3.1W (Ta)
Drain to Source Voltage (Vdss): 25V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Vgs (Max): +16V, -12V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
FET Feature: -
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 12.5V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Part Status: Active
Series: NexFET™
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Supplier Device Package: 8-VSON-CLIP (5x6)
Mounting Type: Surface Mount
Base Part Number: CSD164
detail: N-Channel 25V 38A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)