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STB80NF55L-06T4 Datasheet
Datasheet specifications
| Datasheet's name | ST(B,P)80NF55L-06 |
|---|---|
| File size | 408.508 KB |
| File type | |
| Number of pages | 10 |
Download Datasheet ST(B,P)80NF55L-06 |
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Technical specifications
- Manufacturer: STMicroelectronics
- Series: STripFET™ II
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 136nC @ 5V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: STB80N
- detail: N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK