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- دیتاشیت ST(B,F,P,W)13N80K5
ST(B,F,P,W)13N80K5 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | ST(B,F,P,W)13N80K5 |
|---|---|
| حجم فایل | 1232.593 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 23 |
دانلود دیتاشیت ST(B,F,P,W)13N80K5 |
دانلود دیتاشیت |
|---|
سایر مستندات
STP13N80K5 23 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STB13N80K5
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 190W
- Total Gate Charge (Qg@Vgs): 29nC@0~10V
- Drain Source Voltage (Vdss): 800V
- Input Capacitance (Ciss@Vds): 870pF@100V
- Continuous Drain Current (Id): 12A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@100uA
- Reverse Transfer Capacitance (Crss@Vds): 2pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 370mΩ@10V,6A
- Package: D2PAK
- Manufacturer: STMicroelectronics
- Series: SuperMESH5™
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: STB13N
- detail: N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D2PAK