CSD87313DMST دیتاشیت

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مشاهده دیتاشیت CSD87313DMST	دانلود دیتاشیت

RoHS: true
Type: 2PCSNChannel(Common Drain)
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD87313DMST
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.7W
Total Gate Charge (Qg@Vgs): 28nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 4290pF@15V
Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
Package: WSON-8
Manufacturer: Texas Instruments
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Rds On (Max) @ Id, Vgs: -
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: -
FET Feature: Standard
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Series: NexFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Supplier Device Package: 8-WSON (3.3x3.3)
Mounting Type: Surface Mount
Base Part Number: CSD8731
detail: Mosfet Array 2 N-Channel (Dual) Common Drain 30V 2.7W Surface Mount 8-WSON (3.3x3.3)