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STFI24N60M2 Datasheet
Datasheet specifications
| Datasheet's name | STF(I, W)24N60M2 |
|---|---|
| File size | 520.84 KB |
| File type | |
| Number of pages | 12 |
Download Datasheet STF(I, W)24N60M2 |
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Other documentations
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Technical specifications
- Manufacturer: STMicroelectronics
- Series: MDmesh™ II Plus
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAKFP (TO-281)
- Package / Case: TO-262-3 Full Pack, I²Pak
- Base Part Number: STFI24N
- detail: N-Channel 600V 18A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)