STL45N65M5 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت STL45N65M5	دانلود دیتاشیت

RoHS: true
Type: -
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: STMicroelectronics STL45N65M5
Power Dissipation (Pd): -
Total Gate Charge (Qg@Vgs): -
Drain Source Voltage (Vdss): -
Input Capacitance (Ciss@Vds): -
Continuous Drain Current (Id): -
Gate Threshold Voltage (Vgs(th)@Id): -
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): -
Package: PowerFLAT-HV(8x8)
Manufacturer: STMicroelectronics
Series: MDmesh™ V
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 100V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFLAT™ (8x8)
Package / Case: 8-PowerVDFN
Base Part Number: STL45
detail: N-Channel 650V 3.8A (Ta), 22.5A (Tc) 2.8W (Ta), 160W (Tc) Surface Mount PowerFLAT™ (8x8)