STW56N65DM2 دیتاشیت

STW56N65DM2

مشخصات دیتاشیت

نام دیتاشیت STW56N65DM2
حجم فایل 59.537 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت STW56N65DM2

دانلود دیتاشیت

سایر مستندات

STW56N65DM2 12 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STW56N65DM2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 360W
  • Total Gate Charge (Qg@Vgs): 88nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 4100pF@100V
  • Continuous Drain Current (Id): 48A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@10V,24A
  • Package: TO-247
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DM2
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
  • Base Part Number: STW56N
  • detail: N-Channel 650V 48A (Tc) 360W (Tc) Through Hole TO-247

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