STL57N65M5 دیتاشیت

STL57N65M5

مشخصات دیتاشیت

نام دیتاشیت STL57N65M5
حجم فایل 59.019 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

مشاهده دیتاشیت STL57N65M5

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سایر مستندات

STL57N65M5 16 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STL57N65M5
  • Operating Temperature: +150°C@(Tj)
  • Power Dissipation (Pd): 189W
  • Total Gate Charge (Qg@Vgs): 96nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 4.2nF@100V
  • Continuous Drain Current (Id): 22.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 6pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 61mΩ@10V,17.5A
  • Package: PowerFLAT(8x8)
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ V
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
  • Base Part Number: STL57
  • detail: N-Channel 650V 4.3A (Ta), 22.5A (Tc) 2.8W (Ta), 189W (Tc) Surface Mount PowerFlat™ (8x8) HV

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