CSD19506KTT دیتاشیت

CSD19506KTT

مشخصات دیتاشیت

نام دیتاشیت CSD19506KTT
حجم فایل 83.092 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

مشاهده دیتاشیت CSD19506KTT

دانلود دیتاشیت

سایر مستندات

CSD19506KTT Datasheet 12 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD19506KTT
  • Package: TO-263
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 375W (Tc)
  • Drain to Source Voltage (Vdss): 80V
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
  • Vgs (Max): ±20V
  • FET Type: N-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 40V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Packaging: Cut Tape (CT)
  • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 3.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
  • Supplier Device Package: DDPAK/TO-263-3
  • Mounting Type: Surface Mount
  • Base Part Number: CSD1950
  • detail: N-Channel 80V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3

محصولات مشابه