CSD18535KTT Datasheet دیتاشیت

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Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD18535KTTT
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 300W
Total Gate Charge (Qg@Vgs): 81nC@10V
Input Capacitance (Ciss@Vds): 6620pF@30V
Continuous Drain Current (Id): 200A;279A
Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@100A,10V
Package: TO-263-3
Manufacturer: Texas Instruments
Power Dissipation (Max): 300W (Tc)
Drain to Source Voltage (Vdss): 60V
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Vgs (Max): ±20V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc)
FET Feature: -
Input Capacitance (Ciss) (Max) @ Vds: 6620pF @ 30V
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Part Status: Active
Series: NexFET™
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Supplier Device Package: DDPAK/TO-263-3
Mounting Type: Surface Mount
Base Part Number: CSD1853
detail: N-Channel 60V 200A (Ta), 279A (Tc) 300W (Tc) Surface Mount DDPAK/TO-263-3