CSD18535KCS دیتاشیت

CSD18535KCS

مشخصات دیتاشیت

نام دیتاشیت CSD18535KCS
حجم فایل 80.868 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت CSD18535KCS

دانلود دیتاشیت

سایر مستندات

CSD18535KCS 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD18535KCS
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 300W
  • Total Gate Charge (Qg@Vgs): 81nC@10V
  • Input Capacitance (Ciss@Vds): 6620pF@30V
  • Continuous Drain Current (Id): 200A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@100A,10V
  • Package: TO-220
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 300W (Tc)
  • Drain to Source Voltage (Vdss): 60V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs (Max): ±20V
  • FET Type: N-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 6620pF @ 30V
  • Packaging: Tube
  • Package / Case: TO-220-3
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Supplier Device Package: TO-220-3
  • Mounting Type: Through Hole
  • Base Part Number: CSD1853
  • detail: N-Channel 60V 200A (Ta) 300W (Tc) Through Hole TO-220-3

محصولات مشابه