STH410N4F7-2AG دیتاشیت

STH410N4F7-2AG

مشخصات دیتاشیت

نام دیتاشیت STH410N4F7-2AG
حجم فایل 67.863 کیلوبایت
نوع فایل pdf
تعداد صفحات 19

مشاهده دیتاشیت STH410N4F7-2AG

دانلود دیتاشیت

سایر مستندات

STH410N4F7-2AG, STH410N4F7-6AG 19 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STH410N4F7-2AG
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 365W
  • Total Gate Charge (Qg@Vgs): 141nC@10V
  • Drain Source Voltage (Vdss): 40V
  • Input Capacitance (Ciss@Vds): 11500pF@25V
  • Continuous Drain Current (Id): 200A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 390pF@25V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@10V,90A
  • Package: H2PAK-2
  • Manufacturer: STMicroelectronics
  • Series: Automotive, AEC-Q101, STripFET™ F7
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 365W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2Pak-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: STH410
  • detail: N-Channel 40V 200A (Tc) 365W (Tc) Surface Mount H2Pak-2

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