CSD23382F4T دیتاشیت

CSD23382F4

مشخصات دیتاشیت

نام دیتاشیت CSD23382F4
حجم فایل 773.137 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت CSD23382F4

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مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 500mW
  • Total Gate Charge (Qg@Vgs): 1.35nC@4.5V
  • Drain Source Voltage (Vdss): 12V
  • Input Capacitance (Ciss@Vds): 235pF@6V
  • Continuous Drain Current (Id): 3.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.1V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 76mΩ@500mA,4.5V
  • Package: PicoStar-3
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 500mW (Ta)
  • Drain to Source Voltage (Vdss): 12V
  • Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V
  • Vgs (Max): ±8V
  • FET Type: P-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 6V
  • Packaging: Cut Tape (CT)
  • Package / Case: 3-XFDFN
  • Part Status: Active
  • Series: FemtoFET™
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.35nC @ 4.5V
  • Supplier Device Package: 3-PICOSTAR
  • Mounting Type: Surface Mount
  • Base Part Number: CSD23382
  • detail: P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

محصولات مشابه