دیتاشیت STP17NF25
مشخصات دیتاشیت
نام دیتاشیت |
STx17NF25
|
حجم فایل |
571.359
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
24
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STP17NF25
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
90W
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Total Gate Charge (Qg@Vgs):
29.5nC@10V
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Drain Source Voltage (Vdss):
250V
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Input Capacitance (Ciss@Vds):
1000pF@25V
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Continuous Drain Current (Id):
17A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
165mΩ@10V,8.5A
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Package:
TO-220
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Manufacturer:
STMicroelectronics
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Series:
STripFET™ II
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
250V
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Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
165mOhm @ 8.5A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
29.5nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
90W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220AB
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Package / Case:
TO-220-3
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Base Part Number:
STP17N
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detail:
N-Channel 250V 17A (Tc) 90W (Tc) Through Hole TO-220AB