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- دیتاشیت STD7NM80
STD7NM80 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STD7NM80 |
|---|---|
| حجم فایل | 51.219 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 24 |
دانلود دیتاشیت STD7NM80 |
دانلود دیتاشیت |
|---|
سایر مستندات
STx7NM80(-1) Datasheet 24 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STD7NM80
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 90W
- Total Gate Charge (Qg@Vgs): 18nC@10V
- Drain Source Voltage (Vdss): 800V
- Input Capacitance (Ciss@Vds): 620pF@25V
- Continuous Drain Current (Id): 6.5A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.05Ω@10V,3.25A
- Package: TO-252
- Manufacturer: STMicroelectronics
- Series: MDmesh™
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: STD7
- detail: N-Channel 800V 6.5A (Tc) 90W (Tc) Surface Mount DPAK