STB28N60DM2 دیتاشیت

STB28N60DM2

مشخصات دیتاشیت

نام دیتاشیت STB28N60DM2
حجم فایل 73.375 کیلوبایت
نوع فایل pdf
تعداد صفحات 20

مشاهده دیتاشیت STB28N60DM2

دانلود دیتاشیت

سایر مستندات

ST(B,P,W)28N60DM2 20 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STB28N60DM2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 170W
  • Total Gate Charge (Qg@Vgs): 34nC@10V
  • Input Capacitance (Ciss@Vds): 1500pF@100V
  • Continuous Drain Current (Id): 21A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 160mΩ@10.5A,10V
  • Package: TO-263-3
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DM2
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: STB28N
  • detail: N-Channel 600V 21A (Tc) 170W (Tc) Surface Mount D2PAK

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