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- دیتاشیت STP10N95K5
STP10N95K5 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STP10N95K5 |
|---|---|
| حجم فایل | 69.537 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 22 |
دانلود دیتاشیت STP10N95K5 |
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سایر مستندات
ST(B,F,P,W)10N95K5 22 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STP10N95K5
- Power Dissipation (Pd): 130W
- Drain Source Voltage (Vdss): 950V
- Continuous Drain Current (Id): 8A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@10V,4A
- Package: TO-220
- Manufacturer: STMicroelectronics
- Series: SuperMESH5™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
- Base Part Number: STP10
- detail: N-Channel 950V 8A (Tc) 130W (Tc) Through Hole TO-220