STP10LN80K5 دیتاشیت

STP10LN80K5

مشخصات دیتاشیت

نام دیتاشیت STP10LN80K5
حجم فایل 56.679 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

دانلود دیتاشیت STP10LN80K5

دانلود دیتاشیت

سایر مستندات

Spice Model Tutorial for Power MOSFETS 24 pages

STP10LN80K5 Datasheet 14 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP10LN80K5
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 110W
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 427pF@100V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 630mΩ@10V,4A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP10
  • detail: N-Channel 800V 8A (Tc) 110W (Tc) Through Hole TO-220

محصولات مشابه