STP6N90K5 دیتاشیت

STP6N90K5

مشخصات دیتاشیت

نام دیتاشیت STP6N90K5
حجم فایل 55.079 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت STP6N90K5

دانلود دیتاشیت

سایر مستندات

STP6N90K5 13 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP6N90K5
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 110W
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): 900V
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): 6A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.1Ω@3A,10V
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ K5
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP6N
  • detail: N-Channel 900V 6A (Tc) 110W (Tc) Through Hole TO-220

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