STP170N8F7 دیتاشیت

STP170N8F7

مشخصات دیتاشیت

نام دیتاشیت STP170N8F7
حجم فایل 52.741 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت STP170N8F7

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سایر مستندات

STP170N8F7 12 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP170N8F7
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 250W
  • Total Gate Charge (Qg@Vgs): 120nC@10V
  • Drain Source Voltage (Vdss): 80V
  • Input Capacitance (Ciss@Vds): 8710pF@40V
  • Continuous Drain Current (Id): 120A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@60A,10V
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: STripFET™ F7
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8710pF @ 40V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP170
  • detail: N-Channel 80V 120A (Tc) 250W (Tc) Through Hole TO-220

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