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STW20N95DK5 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STW20N95DK5 |
|---|---|
| حجم فایل | 66.577 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 15 |
دانلود دیتاشیت STW20N95DK5 |
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سایر مستندات
Spice Model Tutorial for Power MOSFETS 24 pages
STW(A)20N95DK5 Datasheet 15 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STW20N95DK5
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 250W
- Total Gate Charge (Qg@Vgs): 50.7nC@10V
- Drain Source Voltage (Vdss): 950V
- Input Capacitance (Ciss@Vds): 1600pF@100V
- Continuous Drain Current (Id): 18A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 330mΩ@9A,10V
- Package: TO-247
- Manufacturer: STMicroelectronics
- Series: MDmesh™ DK5
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 50.7nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
- Base Part Number: STW20N
- detail: N-Channel 950V 18A (Tc) 250W (Tc) Through Hole TO-247