CSD22202W15 دیتاشیت

CSD22202W15

مشخصات دیتاشیت

نام دیتاشیت CSD22202W15
حجم فایل 86.001 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

دانلود دیتاشیت CSD22202W15

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سایر مستندات

CSD22202W15 12 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD22202W15
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.5W
  • Total Gate Charge (Qg@Vgs): 8.4nC@4.5V
  • Drain Source Voltage (Vdss): 8V
  • Input Capacitance (Ciss@Vds): 1390pF@4V
  • Continuous Drain Current (Id): 10A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.1V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12.2mΩ@2A,4.5V
  • Package: BGA-9
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 1.5W (Ta)
  • Drain to Source Voltage (Vdss): 8V
  • Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V
  • Vgs (Max): -6V
  • FET Type: P-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 4V
  • Packaging: Cut Tape (CT)
  • Package / Case: 9-UFBGA, DSBGA
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
  • Supplier Device Package: 9-DSBGA
  • Mounting Type: Surface Mount
  • Base Part Number: CSD222
  • detail: P-Channel 8V 10A (Ta) 1.5W (Ta) Surface Mount 9-DSBGA

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