CSD25304W1015T دیتاشیت

CSD25304W1015T

مشخصات دیتاشیت

نام دیتاشیت CSD25304W1015T
حجم فایل 80.744 کیلوبایت
نوع فایل pdf
تعداد صفحات 17

مشاهده دیتاشیت CSD25304W1015T

دانلود دیتاشیت

سایر مستندات

CSD25304W1015 12 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD25304W1015T
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 750mW
  • Total Gate Charge (Qg@Vgs): 4.4nC@4.5V
  • Input Capacitance (Ciss@Vds): 595pF@10V
  • Continuous Drain Current (Id): 3A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.15V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 32.5mΩ@1.5A,4.5V
  • Package: BGA-6
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 750mW (Ta)
  • Drain to Source Voltage (Vdss): 20V
  • Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V
  • Vgs (Max): ±8V
  • FET Type: P-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V
  • Packaging: Cut Tape (CT)
  • Package / Case: 6-UFBGA, DSBGA
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
  • Supplier Device Package: 6-DSBGA
  • Mounting Type: Surface Mount
  • Base Part Number: CSD2530
  • detail: P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA

محصولات مشابه