CSD17301Q5A دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت CSD17301Q5A	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD17301Q5A
Power Dissipation (Pd): 3.2W
Drain Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 28A
Gate Threshold Voltage (Vgs(th)@Id): 1.55V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 2.6mΩ@8V,25A
Package: DFN-8(5x6)
Manufacturer: Texas Instruments
Power Dissipation (Max): 3.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 8V
Vgs (Max): +10V, -8V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Feature: -
Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Part Status: Active
Series: NexFET™
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Supplier Device Package: 8-VSONP (5x6)
Mounting Type: Surface Mount
Base Part Number: CSD173
detail: N-Channel 30V 28A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)